The Business Bytes
BHUBANESWAR, JUNE 15, 2024 (TBB BUREAU): SiCSem Private Limited and the Indian Institute of Technology Bhubaneswar (IIT Bhubaneswar) have entered into an agreement aimed at pioneering research in Compound Semiconductors. The partnership’s inaugural project will focus on indigenous Silicon Carbide (SiC) crystal growth, with an estimated investment of Rs. 45 crore.
This initiative aims to establish high-volume production capabilities for 150 mm and 200 mm SiC wafers, crucial for advancing technologies such as electric vehicles (EVs), green energy solutions, and beyond 5G communications.
As part of this collaboration, SiCSem Private Limited plans to establish a SiC process fabrication and ATMP (Assembly, Testing, Marking, and Packaging) plant in Odisha. This strategic move is poised to bolster India’s self-sufficiency in power semiconductor devices, reinforcing national initiatives such as the India Semiconductor Mission, Make in India, and Atmanirbhar Bharat.
Prof. Shreepad Karmalkar, Director of IIT Bhubaneswar and a semiconductor devices expert, emphasized that this collaboration marks a significant stride towards fostering innovation and self-reliance in SiC crystal growth. He highlighted the partnership’s potential to catalyze the semiconductor ecosystem in Odisha, contributing to the nation’s semiconductor industry at large.
This industry-academia synergy between SiCSem and IIT Bhubaneswar is set to accelerate technological advancements in the semiconductor domain, laying a robust foundation for future innovations in India.
